Different bias voltage for the input buffer transistor.

不同偏置电压的输入缓冲晶体管。

The opticai bistability with an appropriate bias voltage has been observed.

在适当的偏置电压下，观察到了双稳特性。

The strength of perpendicular STT increases with the increasing bias voltage.

随着电压的增大，垂直项作用增强。

The gain of the APD can be controlled by the magnitude of the reverse bias voltage.

APD的增益可以由反向偏置电压的幅度来控制。

How to choose the bias voltage, the width and the period of the gated pulse is very important.

偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。