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Thermal mismatch induced by the die bonding structure greatly affects the reliability and performance of MEMS devices.
芯片粘接工艺引起的器件-封装热失配会对MEMS器件的可靠性和性能产生显著影响。
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The die bonding requires the temperature field of the oven to be even, but an existing curing oven can not suit the requirement.
半导体封装粘结工艺养护过程要求炉内温度均匀分布,现有养护炉不能满足这一要求。
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The thermal resister of power LED is analyzed in this paper. Using the silver paste and epoxy resin as die bonding materials, two kinds of power LEDs are made.
分析了功率型LED热阻系统的构成,对采用银浆和环氧胶作为芯片键合材料的功率型LED热阻进行了对比研究。
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It proves that the designed parallel bonding mechanism meets the working requirements of IC Chip Die by these characteristic curves.
根据这些曲线,说明所设计的并联焊头机构能满足IC芯片粘片机的工作要求。
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Inorganic bonding was suitable for assembly and fixing of small punch of rubber, plastic and stamping die.
氧化铜无机粘接适合于橡胶、塑料以及冷冲压模具小型芯小冲头的装配与固定。
Die Bonding:贴片 Die 亦指集成电路之心脏部份,系自晶圆(Wafer)上所切下一小片有线路的\晶粒\,以其背面的金层,与定架(Lead Frame)中央的镀金面,做瞬间高温之机械压迫式熔接(Thermo Compression Bonding,T.C.Bonding).或以环氧树脂之接着方式予以固定,称为 Die Bond,完成 IC 内部线路封装的第一步.